he current-voltage (I-V) behavior is commonly used to characterize piezotronic devices. Typical outputs are on the order of a few to tens of microamps for biases between −3 V and +3 V [21,46,50,51,53,55–58]. The metal-semiconductor-metal structure of the devices usually has double Schottky contacts with the n-type semiconductor, however, one of the contacts may be ohmic [50]. Devices fabricated with the same electrode metal at the source and drain electrode will usually have a symmetric I-V curve while devices with different metals will have asymmetric barrier heights and display rectifying behavior [50,56]. Charge transport at the barrier is commonly explained using the thermionic emission diffusion model