\(\begin{array}{rl}V_{th}&=&V_{fb}+V_{inv}+V_{dep}\\&=&\displaystyle \left(\Phi_{m}-\Phi_{s}- \frac{Q}{C'_{ox}}\right)+2 \frac{kT}{q}\ln\left(\frac{N_{A}}{n_{i}}\right)+2 \frac{\sqrt{qN_{A}\varepsilon V_{bi}}}{C'_{ox}}\end{array}\)
其中\(\Phi_{m}\)为栅极材料的功函数（work function），\(\Phi_{s}\)为半导体材料功函数，\(Q\)为氧化物层电荷量，\(C'_{ox}\)为MOS电容的电容量，\(q\)为电子电荷量（\(1.6\times10^{-19}C\)），\(N_{A}\)为衬底半导体材料的掺杂载流子浓度，\(\varepsilon\)为衬底半导体材料的电容率（\(\varepsilon=\varepsilon_{r}\varepsilon_{0}\)）
\(\begin{array}{rl}V_{th}&=&V_{fb}+V_{inv}+V_{dep}\\&=&\displaystyle \left(\Phi_{m}-\Phi_{s}- \frac{Q}{C'_{ox}}\right)+2 \frac{kT}{q}\ln\left(\frac{N_{A}}{n_{i}}\right)+2 \frac{\sqrt{qN_{A}\varepsilon V_{bi}}}{C'_{ox}}\end{array}\)
其中\(\Phi_{m}\)为栅极材料的功函数（work function），\(\Phi_{s}\)为半导体材料功函数，\(Q\)为氧化物层电荷量，\(C'_{ox}\)为MOS电容的电容量，\(q\)为电子电荷量（\(1.6\times10^{-19}C\)），\(N_{A}\)为衬底半导体材料的掺杂载流子浓度，\(\varepsilon\)为衬底半导体材料的电容率（\(\varepsilon=\varepsilon_{r}\varepsilon_{0}\)）
| status | not learned | measured difficulty | 37% [default] | last interval [days] | |||
|---|---|---|---|---|---|---|---|
| repetition number in this series | 0 | memorised on | scheduled repetition | ||||
| scheduled repetition interval | last repetition or drill |